CAS 7440-21-3, Doping Phosphorus CZ Wafer, Backside side surface Etched, Growth Method CZ
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$ 14.92
per Piece (pcs)
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1
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Technical Specifications
| Parameter | Value |
|---|---|
| CAS | 7440-21-3 |
| Form | wafer |
| Type | N Type |
| Doping | Phosphorus |
| Diameter | 2'' |
| Material | Phosphorus Doped Silicon Wafer |
| Thickness | 275um |
| Orientation | <100> |
| Growth Method | CZ |
| Country of Origin | Made in India |
| Front side surface | Polished |
| Backside side surface | Etched |
| Minimum Order Quantity | 1 Gram |
Product Description
Custom Doping and Etching Options for CZ Silicon Wafers
Cz silicon waferour focus is on offering silicon wafers & the resistance to current flow and movement of electron and hole carries in the cz silicon wafer. Resistivity is connected to the ratio of voltage across the silicon to the current flowing through the silicon per unit volume of silicon. Specifications silicon wafer cz type type Single-sided polished surface with a diameter of 3 inches and a thickness of 0. 5 mm, Featuring semiconductor characteristics orientation resistivity, < 1000 ohms/sqpower watts 4 wattvoltage volts 230usage/application used in solar panel
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