CAS 7440-21-3, Doping Phosphorus CZ Wafer, Backside side surface Etched, Growth Method CZ

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Made in India wafer N Type
₹ 1428.00
per Piece (pcs)
MOQ
1

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Technical Specifications

Parameter Value
CAS 7440-21-3
Form wafer
Type N Type
Doping Phosphorus
Diameter 2''
Material Phosphorus Doped Silicon Wafer
Thickness 275um
Orientation <100>
Growth Method CZ
Country of Origin Made in India
Front side surface Polished
Backside side surface Etched
Minimum Order Quantity 1 Gram

Product Description

Custom Doping and Etching Options for CZ Silicon Wafers

Cz silicon waferour focus is on offering silicon wafers & the resistance to current flow and movement of electron and hole carries in the cz silicon wafer. Resistivity is connected to the ratio of voltage across the silicon to the current flowing through the silicon per unit volume of silicon. Specifications silicon wafer cz type type Single-sided polished surface with a diameter of 3 inches and a thickness of 0. 5 mm, Featuring semiconductor characteristics orientation resistivity, < 1000 ohms/sqpower watts 4 wattvoltage volts 230usage/application used in solar panel

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Nagpur
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Nagpur, Maharashtra, India
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Established: 2009
Delivery Time: 60+ Business Days
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